JPH0552069B2 - - Google Patents

Info

Publication number
JPH0552069B2
JPH0552069B2 JP56098203A JP9820381A JPH0552069B2 JP H0552069 B2 JPH0552069 B2 JP H0552069B2 JP 56098203 A JP56098203 A JP 56098203A JP 9820381 A JP9820381 A JP 9820381A JP H0552069 B2 JPH0552069 B2 JP H0552069B2
Authority
JP
Japan
Prior art keywords
substrate
impurity
drain
film
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56098203A
Other languages
English (en)
Japanese (ja)
Other versions
JPS582067A (ja
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56098203A priority Critical patent/JPS582067A/ja
Publication of JPS582067A publication Critical patent/JPS582067A/ja
Publication of JPH0552069B2 publication Critical patent/JPH0552069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
JP56098203A 1981-06-26 1981-06-26 半導体装置の製造方法 Granted JPS582067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098203A JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098203A JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS582067A JPS582067A (ja) 1983-01-07
JPH0552069B2 true JPH0552069B2 (en]) 1993-08-04

Family

ID=14213434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098203A Granted JPS582067A (ja) 1981-06-26 1981-06-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS582067A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737144A1 (de) * 1986-11-10 1988-05-11 Hewlett Packard Co Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung
JPH0661859B2 (ja) * 1991-02-28 1994-08-17 清二 加川 多孔質フィルムの製造装置
JP2658810B2 (ja) * 1993-07-30 1997-09-30 日本電気株式会社 不均一チャネルドープｍｏｓトランジスタ及びその製造方法
JP2827905B2 (ja) * 1994-06-27 1998-11-25 日本電気株式会社 Ｍｉｓｆｅｔおよびその製造方法
JP2790050B2 (ja) * 1994-08-17 1998-08-27 日本電気株式会社 半導体装置の製造方法
JP5811556B2 (ja) * 2011-03-18 2015-11-11 セイコーエプソン株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138178A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Field-defect semiconductor device

Also Published As

Publication number Publication date
JPS582067A (ja) 1983-01-07

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